Saturday, April 5, 2014

Synthesising graphene without damaging its electric and mechanical properties is one of the most significant breakthroughs in graphene research in history and will accelerate many commercialization applications

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Working with Sungkyungkwan University’s School of Advanced Materials Science and Engineering, Samsung's Advanced Institute of Technology (SAIT) has uncovered a new method of synthesising graphene without damaging its electric and mechanical properties.



In the past, researchers have found that multi-crystal synthesis – the process of synthesising small graphene particles to produce large-area graphene – deteriorated the electric and mechanical properties of the material, limiting its application range and making it difficult to commercialise.



The new method involves synthesising large-area graphene into a single crystal on a semiconductor, while maintaining its electric and mechanical properties. By developing a method for growing a single crystal graphene into a large area, the researchers claim they could displace the tech industry’s reliance on silicon.



"This is one of the most significant breakthroughs in graphene research in history,” said the laboratory leaders at SAIT’s Lab. “We expect this discovery to accelerate the commercialisation of graphene, which could unlock the next era of consumer electronic technology."




Science - Wafer-Scale Growth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-Terminated Germanium



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Reposted via Next Big Future

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